Method of laser enhanced vapor phase growth for compound semicon

Details Method of laser enhanced vapor phase growth for compound semicon Method of laser enhanced vapor phase growth for compound semicon

1988-02-16

1989-12-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG48, 148DIG65, 148DIG72, 148DIG94, 156613, 427531, 437 82, 437110, 437112, 437133, 437173, 437936, 437942, 437963, H01L 2120, H01L 2126

Patent

active

048852600

ABSTRACT:
Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.

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