Method of laser crystallization

Details Method of laser crystallization Method of laser crystallization

2006-08-01

2006-08-01

Mackey, James P. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C117S037000

Reexamination Certificate

active

07083676

ABSTRACT:
At least one amorphous silicon island is formed on a substrate first. A first step and a second step laser crystallization processes are thereafter performed in sequence. The amorphous silicon island is irradiated with a laser pulse having a first energy density to re-crystallize an edge portion of the amorphous silicon island into a polysilicon structure. The amorphous silicon island is then irradiated with a laser pulse having a second energy density to re-crystallize a center portion of the amorphous silicon island into a polysilicon structure.

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