Semiconductor device manufacturing: process – Gettering of substrate – By layers which are coated – contacted – or diffused
Reexamination Certificate
2007-02-09
2008-11-18
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Gettering of substrate
By layers which are coated, contacted, or diffused
C438S487000
Reexamination Certificate
active
07452788
ABSTRACT:
A linear pulse laser beam to be applied to an illumination surface is so formed as to have, at the focus, an energy profile in the width direction which satisfies inequalities 0.5L1≦L2≦L1and 0.5L1≦L3≦L1where assuming that a maximum energy is 1, L1is a beam width of two points having an energy of 0.95 and L1+L2+L3is a beam width of two points having an energy of 0.70, L2and L3occupying two peripheral portions of the beam width. According to another aspect of the invention, a compound-eye-like fly-eye lens for expanding a pulse laser beam in a sectional manner is provided upstream of a cylindrical lens for converging the laser beam into a linear beam.
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Kusumoto Naoto
Tanaka Koichiro
Yamazaki Shunpei
Fish & Richardson P.C.
Pert Evan
Semiconductor Energy Laboratory Co,. Ltd.
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