Method of laser annealing to form an epitaxial growth layer

Details Method of laser annealing to form an epitaxial growth layer Method of laser annealing to form an epitaxial growth layer

2007-07-24

2007-07-24

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S393000, C438S396000

Reexamination Certificate

active

10794357

ABSTRACT:
A method for forming an epitaxial layer in a capacitor over interconnect structure, includes selecting a laser having a suitable wavelength for absorption at a seeding layer/annealing layer interface of the capacitor over interconnect structure, and directing laser energy from the selected laser at the capacitor over interconnect structure. The laser energy anneals a feature of the capacitor over interconnect structure to form an epitaxial layer. The annealing is accomplished at a temperature below about 450° C. The selected laser can be an excimer laser using a pulse extender. The capacitor over interconnect structure can be a ferroelectric capacitor formed over a conventional CMOS structure.

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