Method of laser annealing of subsurface ion implanted regions

Details Method of laser annealing of subsurface ion implanted regions Method of laser annealing of subsurface ion implanted regions

1981-07-08

1983-04-12

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 71, 427 531, H01L 21263, H01L 21265

Patent

active

043797270

ABSTRACT:
A method for annealing ion implanted regions buried in a semiconductor substrate without the undesirable effects of thermal diffusion which includes the radiation of the substrate by a continuous laser having an emission frequency longer than 600 nanometers which the buried ion implanted regions will absorb strongly but which will be substantially unabsorbed by the unimplanted regions.
Superior results can be obtained when the substrate is heated to approximately 300.degree. during this laser annealing.

REFERENCES:
patent: 4111720 (1978-09-01), Michel et al.
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4230505 (1980-10-01), Wu et al.
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4318752 (1982-03-01), Tien et al.
Nakamura, J. Appl. Phys. 52 (1981) 1100.
Appl. Phys. Lett., Feb. 1, 1978, pp. 142-144, Gat & Gibbons.
Appl. Phys. Lett., Mar. 1, 1978, pp. 276-278, Gat & Gibbons.
Appl. Phys. Lett., Sep. 1978, pp. 389-391, Gat & Gibbons.
Solid State Tech. Journal, Nov. 1979, pp. 59-68, Gat et al.
Appl. Phys. Lett., Sep. 1978, pp. 542-544, Williams et al.
J. Appl. Phys., Apr. 1979, pp. 2926-2929, Gat et al.
IBM Tech. Disc. Bul., vol. 21, #10, Mar. 1979, p. 4040, R. F. Lever.

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