Method of junction formation for CIGS photovoltaic devices

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Reexamination Certificate

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C136S262000, C136S264000, C136S265000, C438S095000

Reexamination Certificate

active

07019208

ABSTRACT:
Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

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