Method of judging carrier lifetime in semiconductor devices

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324158R, G01R 3126

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045648077

ABSTRACT:
A method for judging whether a group of semiconductor devices have sufficiently short carrier lifetimes to make them suitable for use in high speed electronic circuitry. A determination is made as to the satisfactory carrier lifetime for a pn junction in the devices. A capacitance value representative of the pn junction, when reverse biased, is also determined. The pn junction is placed in series with an inductor sized so that the resonant frequency of the inductor and the pn junction, when reversely biased, is substantially equal to the reciprocal of the carrier lifetime. An oscillating voltage is applied to the series combination of the junction and the inductor, the voltage having a fundamental frequency near but above the resonant frequency and an amplitude greater than a predetermined level which is in the range of 3-5 volts. Finally, the device under test is rejected should an output taken across the pn junction show a substantial frequency component below the fundamental frequency.

REFERENCES:
patent: 3134077 (1964-05-01), Hutchins
patent: 3443227 (1969-05-01), Kelly et al.
patent: 3518545 (1970-06-01), Copeland, III
patent: 3697873 (1972-10-01), Mazur
patent: 3731192 (1973-05-01), Miller
patent: 3939415 (1976-02-01), Terasawa
patent: 4010418 (1977-03-01), Salvatore
patent: 4090132 (1978-05-01), Alexander
patent: 4106096 (1978-08-01), Paoli
patent: 4286215 (1981-08-01), Miller
Solid State Electronics, vol. 13, No. 3, pp. 394-395.
Ikezi, H. et al., "Observation of Multiple-Valued Attractors and Crises in a Driven Nonlinear Circuit", Phys. Rev. A, vol. 28, Aug. 1983, pp. 1207-1209.
Bilotti, A., "Measurement of the Effective Carrier Lifetime by a Distortion Technique", Solid State Electronics, vol. 10, 1967, pp. 445-448.

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