Method of joining semiconductor substrates

Details Method of joining semiconductor substrates Method of joining semiconductor substrates

1988-10-31

1990-12-18

Schor, Kenneth M.

Glass manufacturing

Processes

With shaping of particulate material and subsequent fusing...

65 36, 65 43, 156 89, C03B 1906, C03C 2700

Patent

active

049783793

ABSTRACT:
A method of manufacturing a semiconductor substrate includes the steps of performing flame electrolysis on a galss source with an oxyhydrogen flame, spray-depositing the resultant glass particles on a joint surface of a semiconductor substrate, placing another semiconductor substrate on the deposited glass particles and performing heat-treatment, and joining the two substrates by sintering the glass particles.

REFERENCES:
patent: 2239551 (1941-04-01), Dalton
patent: 2272342 (1942-02-01), Hyde
patent: 3768991 (1973-10-01), Rogers
patent: 3909332 (1975-09-01), Yerman
patent: 4294602 (1981-10-01), Horne
patent: 4363647 (1982-12-01), Bachman et al.
patent: 4393573 (1983-07-01), Kato et al.
patent: 4501060 (1985-02-01), Frye et al.
Miller, Stewart E. (et al); Optical Fiber Telecommunications; Academic Press, Inc., New York, 1979; p. 249.
Nippon Denshin Denwa Kosha, Patent Abstracts of Japan, Jun. 4, 1983, vol. 7, No. 129(E-179) [1274], & JP-A-58-44 723, Mar. 15, '83.
Applied Phys. Lett. 43 (3), Aug. 1, 1983, pp. 263-265.
Davidsohn et al., Proceedings of the IEEE, Sep. 1969, p. 1535, Dielectric Isolated Integrated Circuit Substrate Process.
Kimura et al., Applied Physic Letters, Aug. 1983, p. 265, Epitaxial Film Transfer Technique for Producing Single Crystal Si Film or an Insulating Substrate.

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