Method of joining molded silicon carbide parts

Metal fusion bonding – Process – Diffusion type

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156 89, 22826312, 228903, B23K 35368

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047622695

ABSTRACT:
Silicon carbon molded parts, whether made of silicon carbide sintered together in the absence of pressure or hot pressed silicon carbide are bonded together at close fitting surfaces by applying a layer not thicker than 1 .mu.m on polished surfaces to be joined, containing at least one carbide and/or silicide forming element from the group Ag, Al, Au, B, Be, Co, Cr, Cu, Fe, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Ta, Ti, V, W and Zr. The surfaces to be joined are than fitted together and heated in an inert or reducing atomosphere at a pressure between 10.sup.-1 and 10.sup.-5 Pa at temperatures in the range 800.degree. to 2200.degree. C. while under a pressure applied which is between 1 and 100 MPa. In particular, the heat treatment range from 1550.degree. C. to 1750.degree. C. under a pressure of 15 to 45 MPa applied pressure in argon at a pressure of from 10.sup.3 to 10.sup.5 Pa argon, for 30 to 60 minutes. Preferably a thin layer is vapor-deposited or sputtered. Cr, Cu, Ni, Pt and/or Pd, and especially Cu and its alloys, have been found particularly effective.

REFERENCES:
patent: 2319323 (1943-05-01), Heyroth
patent: 3517432 (1970-06-01), Sandstrom
patent: 4156051 (1979-05-01), Nakamura et al.
patent: 4419161 (1983-12-01), Hailey
patent: 4482418 (1984-11-01), Rigby
patent: 4487644 (1984-12-01), Gupta
BMFT-FB T 79-124, Dec. 1979, pp. 55, 6, 25, 26.
Keramische Zeitschrift 37 Jahrgang Nr. 7,1985, Reportagen, p. 355 "Fugen von Keramik, Glas und Metall".
Fortschrittsberichte der Deutschen Keramischen Gesellschaft, Band 1 (1985) Heft 2., p. 189198.

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