Method of isolating semiconductor devices

Details Method of isolating semiconductor devices Method of isolating semiconductor devices

1998-09-04

2000-10-31

Elms, Richard

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438221, 438200, 437228, 437 67, H01L 2176

Patent

active

061402079

ABSTRACT:
The present invention relates to a method of isolating semiconductor devices enabling to prevent an active area from being reduced due to the increase of an isolation area by means of forming trenches, and includes the steps of forming a mask on a semiconductor substrate wherein the mask discloses field areas, forming a first and second trench in the field areas of the semiconductor substrate wherein the first trench has a larger size and a lower aspect ratio than those of the second trench and wherein the second trench has a smaller size and a higher aspect ratio than those of the first trench, depositing filling oxide on the mask and in the first and second trench by a method including characteristic of sputtering wherein the first and second trench are filled up with the filling oxide and a void is formed on a lower part of the second trench, and forming field oxide film by means of etching back the filling oxide to remain inside the first and second trench.

REFERENCES:
patent: 4885261 (1989-12-01), Yoshikawa
patent: 5217919 (1993-06-01), Gaul et al.
patent: 5448102 (1995-09-01), Gaul et al.
patent: 5966598 (1999-10-01), Yamazaki

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