Method of isolating active areas of a semiconductor substrate by

Details Method of isolating active areas of a semiconductor substrate by Method of isolating active areas of a semiconductor substrate by

1995-03-13

1997-06-24

Niebling, John

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

148DIG133, 438427, 438437, H01L 21306

Patent

active

056417047

ABSTRACT:
The semiconductor device includes in a semiconductor substrate (1) at least one predetermined region (6) of the substrate intended subsequently to form an active area, uncovered on its upper surface and situated between lateral trenches (7) containing an insulative material including a layer (9) of a planarising first oxide and at least one underlying layer (8) of a conformal second oxide. The insulative material can form on either side of said uncovered predetermined region (6) of the substrate a boss (16) on the plane upper surface of the device (D) less than 1000 .ANG. high.

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