Method of isolating a top gate of a MESFET and the resulting dev

Details Method of isolating a top gate of a MESFET and the resulting dev Method of isolating a top gate of a MESFET and the resulting dev

1989-09-11

1990-05-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437176, 357 22, H01L 21265

Patent

active

049295683

ABSTRACT:
A MESFET including a Schottky top gate which extends across the channel region between the source and drain regions and beyond two opposed sides of the dielectric isolation onto the substrate in which the device is built. The portion of the top gate which extends across the channel is disconnected from the portion which extends across the substrate beyond the dielectric isolation. This may result from the removal of the gate material at the dielectric isolation or by the portion of the gate material which is on the dielectric isolation being vertically displaced and disconnected or discontinuous from the portion of the gate material which extends across the channel and that portion which extends across the substrate.

REFERENCES:
patent: 3722079 (1973-03-01), Beasom
patent: 3755012 (1973-08-01), George et al.
patent: 4185291 (1980-01-01), Hirao et al.
patent: 4287526 (1981-09-01), Sakuma
patent: 4456918 (1984-02-01), Beasom
patent: 4495694 (1985-01-01), Beasom
patent: 4546539 (1985-10-01), Beasom

Affiliated with

Also associated with

Rating

Method of isolating a top gate of a MESFET and the resulting dev does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of isolating a top gate of a MESFET and the resulting dev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of isolating a top gate of a MESFET and the resulting dev will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-520671