Fishing – trapping – and vermin destroying
Patent
1987-09-25
1989-06-20
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
148DIG117, 148DIG151, 148DIG163, 156644, 156662, 357 47, 357 50, 437 72, 437239, 437979, 437958, H01L 2978, H01L 21265
Patent
active
048409200
ABSTRACT:
In a method of manufacturing a semiconductor device according to the present invention, regions of first conductivity type buried layers formed on a first conductivity type substrate are retracted with respect to regions of second conductivity type buried layers. Thus, in formation of second conductivity type epitaxial layer, first conductivity type impurity contained in the first conductivity type buried layers is prevented from floating diffusion up to element regions of the second conductivity type epitaxial layers. At the same time, the semiconductor device can be implemented with high density of integration.
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Ghandhi, "VLSI Fabrication Principles", John Wiley & Sons, New York, N.Y., 1983, pp. 348-349.
Bunch William
Chaudhuri Olik
Mitsubishi Denki & Kabushiki Kaisha
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