Method of irradiating an object by means of a charged particle b

Details Method of irradiating an object by means of a charged particle b Method of irradiating an object by means of a charged particle b

1991-04-03

1992-09-29

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

051516055

ABSTRACT:
A low-energetic charged particle beam, involving only a slight space charge effect, can be obtained by high-frequency deflection of a charged particle beam before deceleration. Using a deceleration element provided with curved surfaces and a slit-shaped aperture, a focusing effect is obtained so that the charged particle beam is imaged along a linear path on a target surface. For implantation of a semiconductor substrate, a uniform and shallow implantation can be achieved at adequate speed by means of a low-energetic ion beam obtained in the above manner.

REFERENCES:
patent: 4766320 (1988-08-01), Naitoh et al.
patent: 4782304 (1988-11-01), Aitken
patent: 4851693 (1989-07-01), Fisher

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