Method of ion implantation through an electrically insulative ma

Details Method of ion implantation through an electrically insulative ma Method of ion implantation through an electrically insulative ma

1974-07-15

1976-03-23

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29571, 148187, 357 91, H01L 21265

Patent

active

039458563

ABSTRACT:
A method of ion implantation into a semiconductor substrate which comprises forming a layer of an electrically insulative material, such as silicon dioxide, on the substrate over the region to be ion implanted. Then, a beam of ions having sufficient energy to pass through the layer of insulative material and to penetrate into the substrate is directed at a particular portion of the insulative layer. Before proceeding further, at least the upper half of the insulative layer, and preferably all of the upper portion of the insulative layer, in excess of a remaining thickness of 100A, is removed by etching. Then, the substrate is heated whereby the ions are driven further into the substrate to form the selected ion implanted region.

REFERENCES:
patent: 3388009 (1968-06-01), King
patent: 3529347 (1970-09-01), Ingless et al.
patent: 3566519 (1971-03-01), Lapham, Jr.
patent: 3632438 (1972-01-01), Carlson et al.
patent: 3704178 (1972-11-01), Hill
patent: 3717790 (1973-02-01), Dalton et al.
patent: 3793088 (1974-02-01), Eckton, Jr.

Affiliated with

Also associated with

Rating

Method of ion implantation through an electrically insulative ma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of ion implantation through an electrically insulative ma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of ion implantation through an electrically insulative ma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1642014