Method of ion implantation into a semiconductor substrate provid

Details Method of ion implantation into a semiconductor substrate provid Method of ion implantation into a semiconductor substrate provid

1979-10-26

1981-03-24

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

148 15, 250492A, 250492B, 357 23, 357 24, 357 91, 427 82, C23C 1700

Patent

active

042580773

ABSTRACT:
In the production of a semiconductor device, such as an IC including MOS transistors, impurity ions are implanted into the semiconductor substrate of the device provided with an insulating film. The insulating film is electrically charged by the impurity ions and may be destroyed due to an electric potential between the insulating film and the semiconductor substrate. A novel process provided by the invention prevents the destruction of the insulating film and shortens the ion implantation time, since the beam current of the impurity ions is successively increased until the required dosing amount is obtained.

REFERENCES:
patent: 3117022 (1964-01-01), Bronson et al.
patent: 3734769 (1973-05-01), Hirschfeld
patent: 4001049 (1977-01-01), Baglin et al.
patent: 4021675 (1977-05-01), Shifrin
patent: 4076558 (1978-02-01), Rupprecht et al.
patent: 4088799 (1978-05-01), Kurtin
patent: 4118630 (1978-10-01), McKenna et al.

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