Method of ion implantation

Details Method of ion implantation Method of ion implantation

1995-06-06

1996-08-06

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 40, 437229, 148DIG106, 430311, H01L 21336, H01L 21266

Patent

active

055433421

ABSTRACT:
In implantation of ions into a wafer, in the manufacture of a semiconductor device, a desired ion beam absorber pattern having locally different thicknesses is previously formed on a major surface of the wafer. The ion beam absorber pattern absorbs an ion beam to be implanted and is formed of a thin film material with its absorbency varying depending on its thickness. Ions are implanted once on the major surface of the wafer through this ion beam absorber pattern to form desired different impurity profiles in depth of desired regions on the major surface of the wafer.

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