Method of ion implantation

Details Method of ion implantation Method of ion implantation

1988-08-02

1990-01-09

Pianalto, Bernard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

B05D 306

Patent

active

048927520

ABSTRACT:
In an apparatus for and a method of ion implantation for implanting boron (B) and/or arsenic (As) ions in a substrate surface, a four-element alloy of platinum, silicon, arsenic, and boron or a three-element alloy of copper (Cu), arsenic, and boron is held in a reservoir in a molten state; the alloy is then supplied from the reservoir to an emitter, and a strong electric field is applied to the tip of the emitter to extract ions from the tip of the emitter. The reservoir and emitter may be a refractory metal selected from W, Mo, and Ta, at least the surface of which has been nitrided.

Affiliated with

Also associated with

Rating

Method of ion implantation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of ion implantation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of ion implantation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-144922