Method of ion etching Cd-Hg-Te semiconductors

Details Method of ion etching Cd-Hg-Te semiconductors Method of ion etching Cd-Hg-Te semiconductors

1978-02-24

1978-12-05

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, C23C 1500

Patent

active

041284674

ABSTRACT:
A method of etching comprises etching a cadmium-mercury-telluride semiconductor layer by means of an ion beam.

REFERENCES:
patent: 3860783 (1975-01-01), Schmidt et al.
patent: 3988564 (1976-10-01), Garvin et al.
P. G. Gloersen, "Masking for Ion Beam Etching", Solid State Technology, Apr. 1976, pp. 68-73.
P. G. Gloersen, "Ion-Beam Etching", J. Vac. Sci. Tech., vol. 12 (1975), pp. 28-35.
C. M. Melliar-Smith, "Ion Etching for Pattern Delineation", J. Vac. Sci. Tech., vol. 13, pp. 1008-1022 (1976).

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