Method of ion beam synthesis of thin silicon nitride films and r

Details Method of ion beam synthesis of thin silicon nitride films and r Method of ion beam synthesis of thin silicon nitride films and r

1984-10-09

1985-06-11

Pianalto, Bernard D.

Stock material or miscellaneous articles

Composite

Of silicon containing

427 38, 427 94, 427286, 427299, 427399, B32B 904

Patent

active

045228868

ABSTRACT:
A method is disclosed for the synthesis of ultra-thin silicon nitride (Si.sub.x N.sub.y) films by the direct interaction of a low energy noble ion beam (e.g. Ar.sup.+ or He.sup.+), with NH.sub.3 physically absorbed on a silicon surface. The method is directed toward applications which require the use of ultra-thin insulating layers, such as in MIS technology.
The disclosed method provides for the synthesis of ultra-thin films of silicon nitride via the interaction of NH.sub.3 absorbed on a silicon substrate and a low energy nobel ion beam. Preferential absorption of NH.sub.3 is effected by cooling of the substrate below the boiling point of NH.sub.3. The ion beam is used to generate reactive N and Si species which combine to form compounds of silicon nitride. The physical appearance of the films formed by this method is comparable to those produced by low pressure chemical vapor deposition.

REFERENCES:
J. Ashley Taylor, et al., Interactions of Ion Beams With Surfaces. Reactions of Nitrogen With Silicon and Its Oxides, J. Chem. Phys. 68(4), Feb. 1978, pp. 1776-1784
G. E. Thomas, et al., Preparation of Surface Silicon Nitride Films By Low Energy Ion Implantation, Appl. Phys. Lett. 41(1), Jul. 1982, pp. 56-59.
P. Bourguet, et al., Study of Buried Silicon Nitride Layers Synthesized By Ion Implantation, J. Appl. Phys. 51(2), Dec. 1980, pp. 6169-6175.

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