Method of introducing impurities into a semiconductor

Details Method of introducing impurities into a semiconductor Method of introducing impurities into a semiconductor

1975-07-07

1977-06-28

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

204140, C25D 1100

Patent

active

040324184

ABSTRACT:
A method of manufacturing a p-n, n.sup.+-n or p.sup.+-p junction in a semiconducting material, introducing into said material ions of an impurity material by exposing a surface of said semiconductor to a liquid containing ions of said impurity material, applying a voltage across said semiconductor-liquid interface, said voltage having a polarity and magnitude such that said ions are accelerated and drawn into said semiconducting material without the formation of a deposit of said impurity material on said exposed surface being necessary.

REFERENCES:
patent: 2560792 (1951-07-01), Gibney
patent: 3261773 (1966-07-01), Sandmann, et al.
patent: 3380902 (1968-04-01), Weiss
patent: 3385776 (1968-05-01), Fiedler
patent: 3755092 (1973-08-01), Antula

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