Method of integrating semiconductor components

Details Method of integrating semiconductor components Method of integrating semiconductor components

1977-11-11

1980-04-29

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 357 15, B01J 1700

Patent

active

041998600

ABSTRACT:
A dielectric-isolated PNP transistor with Schottky protection, either alone or as one of an integrated pair of complementary bipolar transistors has complete dielectric isolation from neighboring devices and from the substrate by means of a topside anisotropic etch. This leaves the devices in mesa form, thinner versions having the facility of lateral terminations, e.g. for the collector. The method is advantageously adapted to provide single type or complementary bipolars with integrated Schottky barrier protection.

REFERENCES:
patent: 3623925 (1971-11-01), Jenkins
patent: 3818583 (1974-06-01), Polata
patent: 4063271 (1977-12-01), Bean

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