Method of integrating MOS devices of double and single gate stru

Details Method of integrating MOS devices of double and single gate stru Method of integrating MOS devices of double and single gate stru

1983-04-22

1985-01-29

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, 357 23, 357 91, G11C 1140, B01J 1700, H01L 2927

Patent

active

044956932

ABSTRACT:
A nonvolatile semiconductor memory device is provided having a MOS transistor and a floating gate type MOS transistor. The length of an overlap between a floating gate and a drain region of the floating gate type MOS transistor is made smaller than that of an overlap between the gate and the drain region of the MOS transistor.

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