Method of integrated circuit manufacturing using deposited oxide

Details Method of integrated circuit manufacturing using deposited oxide Method of integrated circuit manufacturing using deposited oxide

1989-12-29

1994-07-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437236, 4272551, 4272552, H01L 2102

Patent

active

053288726

ABSTRACT:
Contamination of LPCVDBP TEOS films is reduced by preventing volatile compounds, resulting from reactions of the residue in the outlet of the furnace from reaching the deposition portion of the furnace where they would otherwise react with the deposition gases to produce chemically generated particles which contaminate the dielectric film.

REFERENCES:
patent: 4557950 (1985-12-01), Foster et al.
patent: 4781945 (1988-11-01), Nishimura et al.
patent: 4791005 (1988-12-01), Becker et al.
patent: 4849259 (1989-07-01), Biro et al.
patent: 4876225 (1989-10-01), Wagner et al.
patent: 4894352 (1990-01-01), Lane et al.
Journal of Vacuum Science and Technology, "Process and Film Characterization of Low-Pressure Tetraethylothosilicate-Borophosphosilicate Glass," B4, pp. 732-744, May/Jun. 1986; F. S. Becker et al.
NEC Research and Development, "Ozone/Organic`Source APCVD for ULSI Reflow Glass Films," 94, pp. 1-7, Jul. 1989, Yasuo Ikeda et al.

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