Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – And gettering of substrate
Patent
1997-09-05
2000-01-11
Niebling, John F.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
And gettering of substrate
438471, H01L 2176, H01L 21322
Patent
active
060135565
ABSTRACT:
Crochralski wafers are desirably thermally processed at an elevated temperature prior to integrated circuit fabrication. The thermal processing reduces the number of oxygen nucleation centers and prevents subsequent oxygen precipitation from interfering with iron contamination measurements.
REFERENCES:
patent: 4868133 (1989-09-01), Huber
patent: 5757063 (1998-05-01), Tomita et al.
Woijciechowski, U., Internal Gettering Effectiveness for Transition Metals/Fe, Ni/in Cz-Si, Proceedings of the 4th International Autumn Meeting--Gettering and Defect Engineering in Semiconductor Technology; Abstract, 1991.
Higashi Gregg Sumio
Hong Mon-Fen
Kimerling Lionel Cooper
Ma Yi
Grillo Anthony
Jones Josetta
Lucent Technologies - Inc.
Niebling John F.
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