Method of integrated circuit fabrication

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – And gettering of substrate

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438471, H01L 2176, H01L 21322

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active

060135565

ABSTRACT:
Crochralski wafers are desirably thermally processed at an elevated temperature prior to integrated circuit fabrication. The thermal processing reduces the number of oxygen nucleation centers and prevents subsequent oxygen precipitation from interfering with iron contamination measurements.

REFERENCES:
patent: 4868133 (1989-09-01), Huber
patent: 5757063 (1998-05-01), Tomita et al.
Woijciechowski, U., Internal Gettering Effectiveness for Transition Metals/Fe, Ni/in Cz-Si, Proceedings of the 4th International Autumn Meeting--Gettering and Defect Engineering in Semiconductor Technology; Abstract, 1991.

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