Method of inspecting semiconductor non-volatile memory devices

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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29574, 324158T, 371 24, G01R 3126

Patent

active

046072195

ABSTRACT:
Memorized data retention characteristics of a FAMOS transistor is tested by writing predetermined information into a semiconductor element while it is in a state of a wafer and the information is read out after the element has been mounted in a package. The written information and the read out information are checked to determine whether they coincide with each other or not.

REFERENCES:
patent: 4379259 (1983-04-01), Varadi et al.

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