X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Patent
1989-10-16
1991-04-09
Church, Craig E.
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
378 73, G01N 23207
Patent
active
050070711
ABSTRACT:
A method of inspecting bonded wafers, which involves obtaining a Lang topograph of bonded wafers as a sample by using a Lang camera, or further treating an image thereon, thereby detecting unbonded regions at the interface of the bonded wafers. In bonding two silicon wafers to each other, an one-side surface of each silicon wafer is finished into a mirror surface and then is cleaned to a sufficient extent. Subsequently, both the mirror surfaces of the two silicon wafers are superposed one upon the other and then the superposed wafers are subjected to high-temperature heat treatment. The high-temperature heat treatment is conducted mainly for the purpose of removing distortions on the bonded surfaces, making the bonding interface monolithic, and, absorbing and diffusing a very small amount of atmospheric gas.
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patent: 4078175 (1978-03-01), Fletcher et al.
Takahiro Kojima et al., X-Ray Diffraction Microscopy by an Electronic Streak Camera System, Japanese Journal of Applied Physics, Jul. 1988, pp. 1331-1334.
B. Forque, Cartes A CMS, Les Rayons X au Secours du Test, mesures, Jun. 1988, pp. 33-34.
J. K. Wang et al., Nondestructive Diagnosis of Thick Production-Line Microelectronic Components Using Transmission Acoustic Microscope, Dec. 4-6, 1978, pp. 449-451.
"Real-Time X-Ray Topography: Defect Dynamics and Crystal Growth", by Queisser et al., Journal of Crystal Growth 52 (1981), 897-906.
"Application of X-Ray Topography to the Characterization of Semiconductor Surface Layers", by Wang et al., Conference: Developments in Applied Spectroscopy, Chicago, Ill., May 1968, pp. 31-60.
Abe Takao
Nakano Masami
Church Craig E.
Shin-Etsu Handotai & Co., Ltd.
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