Method of inspecting a mask

Details Method of inspecting a mask Method of inspecting a mask

2007-01-09

2007-01-09

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000, C382S144000

Reexamination Certificate

active

10631082

ABSTRACT:
The invention relates to a method of inspecting a mask comprising the steps: patterning a semiconductor material with a reference mask, patterning the semiconductor material with the mask as the inspection item, inspecting both patterns on the semiconductor material by means of an apparatus suitable for inspecting the semiconductor material, and comparing the pattern generated by the inspection item mask to the pattern generated by the reference mask to detect deviations in the inspection item mask from the reference mask. The invention is particularly suitable for reticule inspection. When a semiconductor wafer is multiply patterned by the reference mask and the inspection item mask alternatingly side-by-side, deviations in the reticules are evident as recurrent discrepancies between the patterns on the wafer.

REFERENCES:
patent: 4906326 (1990-03-01), Amemiya et al.
patent: 5795688 (1998-08-01), Burdorf et al.
patent: 6426168 (2002-07-01), Johnson
patent: 2002/0024019 (2002-02-01), Matsuoka
patent: 689 23 638 (1996-01-01), None
patent: 101 41 422 (2002-05-01), None
patent: 0 334 680 (1995-08-01), None

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