Dynamic information storage or retrieval – Specific detail of information handling portion of system – Electrical modification or sensing of storage medium
Patent
1995-03-15
1997-04-22
Edun, Muhammad N.
Dynamic information storage or retrieval
Specific detail of information handling portion of system
Electrical modification or sensing of storage medium
369 58, 369 13, 250306, 250307, G11B 700
Patent
active
056234759
ABSTRACT:
The invention relates to a method and a corresponding device for inscribi reading, and erasing information from an information storage layer through use of an electrical field. The information storage layer includes a polarisable polymer film for an active layer. The dipoles are initially oriented in a unipolar manner. Inscription of the information is effected by the application of an opposing electrical field to the active layer. Readout of the different polarisation conditions is effected optically, the phase position of the emitted light of the optical second harmonic being detected by an interferometric process. The information on the storage layer may be deleted by an electrical polarisation process.
REFERENCES:
patent: 4968390 (1990-11-01), Bard et al.
patent: 5371729 (1994-12-01), Yamamoto et al.
patent: 5430705 (1995-07-01), Takanashi et al.
patent: 5439777 (1995-08-01), Kawada et al.
patent: 5448421 (1995-09-01), Matsuda et al.
patent: 5457536 (1995-10-01), Kornfield et al.
J. Appl. Phys. (USA), vol. 66, No. 1, Jul. 1, 1989, pp. 342-349.
Danz Rudi
Pinnow Manfred
Edun Muhammad N.
Fraunhofer-Gesellschaft zur Forderung der ange-wandten Forschung
LandOfFree
Method of inscribing and readout of information in an informatio does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of inscribing and readout of information in an informatio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of inscribing and readout of information in an informatio will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-346606