Method of inductively contacting semiconductor regions

Details Method of inductively contacting semiconductor regions Method of inductively contacting semiconductor regions

1991-10-25

1992-06-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437242, H01L 2144

Patent

active

051262843

ABSTRACT:
A semiconductor contact system is formed by inductively coupling an ohmic electrode, such as a metal, to a semiconductor region by means of an intervening diamagnetic boride glass, which necessarily constrains most electric current to prevail along the uniaxial normal to the semiconductor contact. The low permeability of the diamagnetic boride glass results in a low resistance to direct-current electricity along the uniaxial displacement axis of the diamagnetic boride glass. The transient time constant associated with the inductor is generally much smaller than the semiconductor device switching times, with the steady-state current being essentially established by the semiconductor resistance so as to result in an ohmic semiconductor contact void any significant rectification effects. An ohmic contact by means of an inductively-coupled electrode is generally independent of the semiconductor conductivity or ionicity.

REFERENCES:
patent: 3813252 (1974-05-01), Lipp et al.
patent: 4361599 (1982-11-01), Wourms
patent: 4419161 (1983-12-01), Hailey
patent: 4931238 (1990-06-01), Nishimo et al.

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