Method of inducing flow or densification of phosphosilicate glas

Details Method of inducing flow or densification of phosphosilicate glas Method of inducing flow or densification of phosphosilicate glas

1983-01-07

1984-06-19

Schor, Kenneth M.

Coating processes

Electrical product produced

Condenser or capacitor

65 32, 65102, 65104, 29577C, 148 15, 427 93, H01L 2102

Patent

active

044553250

ABSTRACT:
Phosphorus-doped silicon oxide glass is flowed on an integrated circuit by raising the pressure in which that integrated circuit is placed above atmospheric for a selected period of time and heating said phosphosilicate glass to a selected temperature sufficient to cause said glass to flow at said pressure. The atmosphere in which the device is placed includes moisture to enhance the flow of the glass at temperatures substantially beneath those at which dopants in the underlying integrated circuit move. The result is that the electrical characteristics of the integrated circuit are not substantially altered during glass flow.

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