Method of inducing differential etch rates in glow discharge pro

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156628, 156643, 156657, 427 39, 427 86, H01L 21306, B44C 122, C03C 1500, C03C 2506

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042173930

ABSTRACT:
A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.

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patent: 3873203 (1975-03-01), Stevenson
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patent: 4059461 (1977-11-01), Fan et al.
patent: 4064521 (1977-12-01), Carlson
patent: 4092209 (1978-05-01), Ipri
Applied Physics Letters, vol. 30, No. 11, Jun. 1977, Quantitative Analysis of Hydrogen In Glow Discharge Amorphous Silicon, pp. 561-563. _
Applied Physics Letter, 32(4), Feb. 15, 1978, Chemical Vapor Deposition of Silicon Using A CO.sub.2 Laser, pp. 254-255. _
IEEE Transactions On Electronic Devices, vol. ED-21, No. 11, Nov. 1974 p. 743.

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