Method of increasing yield in OFETs by using a high-K...

Details Method of increasing yield in OFETs by using a high-K... Method of increasing yield in OFETs by using a high-K...

2008-07-11

2010-12-21

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S149000, C438S150000, C438S151000, C438S508000, C257S040000

Reexamination Certificate

active

07855097

ABSTRACT:
Dielectric layer pinholes in OFET structures are addressed in a method of fabricating OFET devices through the addition of a high-K dielectric layer to eliminate the effects of shorts in the dielectric layer. The original dielectric layer is maintained such that the semiconductor/dielectric interface remains unchanged. The high-K dielectric layer contributes material to the gate dielectric to plug up pinholes in the original dielectric, but does not contribute significant capacitance due to the high dielectric constant of the additional dielectric layer. The incidence of pinholes in the dielectric layer is reduced without significantly affecting the performance of the OFET transistor.

REFERENCES:
patent: 7364940 (2008-04-01), Kim et al.
patent: 2006/0086936 (2006-04-01), Hoffman et al.
patent: 2007/0018163 (2007-01-01), Chian et al.
patent: 2007/0134857 (2007-06-01), Suh et al.
patent: 2007/0215957 (2007-09-01), Chen et al.
patent: 2008/0001151 (2008-01-01), Jun et al.

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