Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1992-11-18
1994-08-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
257618, 437226, H01L 2102, H01L 21302
Patent
active
053410246
ABSTRACT:
Certain non-square dies, such as triangular dies, greatly elongated rectangular dies, parallelogram dies, trapezoidal, and the like, are able to be laid out in the area of a circular semiconductor wafer more "efficiently" than square dies. Further, a peripheral area of these certain non-square dies is advantageously increased relative to the area contained within the peripheral area, to accommodate increased I/O connections to the active elements of the die.
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"Volume Production Of Unique Plastic Surface-Mount Modules For The IBM 80-ns 1-Mbit Dram Chip By Area Wire Bond Techniques", by Ward, IEEE, 1988, pp. 552-557.
Brown Peter Toby
Hille Rolf
Linden Gerald E.
LSI Logic Corporation
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