Method of increasing the gettering effect in the bulk of semicon

Details Method of increasing the gettering effect in the bulk of semicon Method of increasing the gettering effect in the bulk of semicon

1979-08-14

1980-09-02

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29576T, 148174, 148175, 156612, 357 64, H01L 21324, H01L 2904

Patent

active

042204836

ABSTRACT:
The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750.degree.-900.degree. C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters.

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Maher et al, "Characterization . . . Annealed Silicon Containing Oxygen", J. Applied Physics, vol. 47, No. 9, Sep. 1976, pp. 3813-3825.
Hu et al, "Gettering by Oxygen Precipitation", I.B.M. Tech. Discl. Bull., vol. 19, No. 12, May 1977, p. 4618.
Mets, E. J., "Poisoning and Gettering Effects in Silicon Junctions", J. Electrochem. Soc., Apr. 1965, vol. 112, No. 4, pp. 420-425.
Komaleeva et al., "Influence of Heat Treatment . . . Oxygen in Silicon", Sov. Phys. Semicond., vol. 10, No. 2, Feb. 1976, pp. 191-192.
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Barson, F., "Emitter-Collector Shorts in Bipolar Devices", Tech. Digest, 1975, International Electron Dev. Mtg., Dec. 1975, Wash., D. C.

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