Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2011-06-07
2011-06-07
Chen, Jack (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257S620000, C257SE23004, C428S066700
Reexamination Certificate
active
07956441
ABSTRACT:
A composite structure that includes front faces of the first and second substrates that are molecularly bonded to each other. The dimensions of the second substrate outline are larger than the first substrate outline, and a peripheral side of the second substrate substantially borders the second front face and is oriented generally perpendicularly with respect thereto. The front faces are molecularly bonded such that the outline of the first front face is disposed at least partially within the outline of the second front face. A peripheral ring extending around the first front face and facing the first substrate, in which bonding between the front faces is weak or absent, has a maximum width of less than about 0.5 mm.
REFERENCES:
patent: 5152857 (1992-10-01), Ito et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5597410 (1997-01-01), Yen
patent: 6429104 (2002-08-01), Auberton-Herve
patent: 6664169 (2003-12-01), Iwasaki et al.
patent: 7452584 (2008-11-01), Maleville
patent: 2001/0055854 (2001-12-01), Nishida et al.
patent: 2003/0008478 (2003-01-01), Abe et al.
patent: 1 059 663 (2000-12-01), None
patent: 1 189 266 (2002-03-01), None
patent: 06-61201 (1994-03-01), None
patent: 10-93122 (1998-04-01), None
Weldon et al., “Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation,” Proceedings 1997 IEEE International SOI Conference, Oct. 1997, pp. 124-125.
Chen Jack
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
LandOfFree
Method of increasing the area of a useful layer of material... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of increasing the area of a useful layer of material..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of increasing the area of a useful layer of material... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2664721