Method of increasing capacitance by surface roughening in semico

Details Method of increasing capacitance by surface roughening in semico Method of increasing capacitance by surface roughening in semico

1997-03-07

2000-06-13

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438386, H01L 2170

Patent

active

060749261

ABSTRACT:
A method of increasing capacitance by surface roughening in semiconductor wafer processing includes the following steps: a) applying a first layer of material atop a substrate thereby defining an exposed surface; b) incontinuously adhering discrete solid particles to the first layer exposed surface to roughen the exposed surface; and c) applying a second layer of material atop the first layer and adhered solid particles to define an outer surface, the particles adhered to the first layer inducing roughness into the outer surface thereby increasing its surface area and accordingly capacitance of the second layer in the final wafer structure.

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