Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-07-03
2007-07-03
Malsawma, Lex (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE21665
Reexamination Certificate
active
11182943
ABSTRACT:
A method for incorporating magnetic materials in a semiconductor manufacturing process includes manufacturing a semiconductor device including interlayers and dielectric layers, depositing a magnetic layer above a semiconductor device and forming metallized contacts for connecting interlayers of the semiconductor device. With the method of the present invention, the deposition of the magnetic material is integrated with the semiconductor manufacturing process.
REFERENCES:
patent: 5389566 (1995-02-01), Lage
Johnson, Mark, et al., “Hybrid Hall effect device”, Applied Physics Letters, vol. 71, No. 7: Aug. 1997.
Johnson, Mark, “Hybrid Ferromagnet-Semiconductor Device for Memory and Logic”, IEEE Transactions on Magnetics, vol. 36, No. 5: Sep. 2000.
Johnson, Mark, “Magnetoelectronic memories last and last . . . ”, IEEE Spectrum: Feb. 2000.
Berndt Dale F.
Peczalski Andrzej
Vogt Eric E.
Witcraft William F.
Honeywell International , Inc.
Malsawma Lex
McDonnell Boehnen & Hulbert & Berghoff LLP
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