Fishing – trapping – and vermin destroying
Patent
1991-04-24
1993-12-07
Stoll, Robert L.
Fishing, trapping, and vermin destroying
437133, 437129, H01L 2120
Patent
active
H00012645
ABSTRACT:
In situ geometrical and stoichiometric properties of deposited films are brought about by employing a scanned irradiation source directed to a spot which is scanned across the growth surface in a chemical va
REFERENCES:
patent: 4071383 (1978-01-01), Nagata et al.
patent: 4117504 (1978-09-01), Maslov et al.
patent: 4292091 (1981-09-01), Togei
patent: 4543270 (1985-09-01), Oprysko et al.
patent: 4579750 (1986-04-01), Bowen et al.
patent: 4581248 (1986-04-01), Roche
patent: 4608117 (1986-08-01), Ehrlich et al.
patent: 4645687 (1987-02-01), Donnelly et al.
patent: 4668528 (1987-05-01), Ehrlich et al.
patent: 4678536 (1987-07-01), Murayama et al.
patent: 4693779 (1987-09-01), Okuhira et al.
patent: 4724219 (1988-02-01), Ridinger
patent: 4726320 (1988-02-01), Ichikawa
patent: 4843031 (1989-06-01), Ban et al.
patent: 4885260 (1989-12-01), Ban et al.
Aoyagi et al., "Atomic-Layer Growth . . . Laser Metalorganic Vapor-Phase Epitaxy," J. Vac. Sci. Technol. B. 5(5), Sep./Oct. 1987, pp. 1460-1464.
Nishizawa, "Photo-Excited Molecular Layer Epitaxy . . . ", JEE, Oct. 1984, pp. 32-39.
York et al., Low-Temperature Laser Photochemical Vapor Deposition of GaAs, Appl. Phys. Lett. vol. 54, No. 19, 8 May 1989, pp. 1866-1868.
Sudarsan et al., Ultraviolet Laser-Induced Low-Temperature Epitaxy of GaP, Appl. Phys. Lett. vol. 55, No. 8, 21 Aug. 1989, pp. 738-740.
W. Roth et al., "Laser Stimulated Growth of Epitaxial GaAs", Materials Research Society Symposia Proceedings entitled Laser Diagnostics and Photochemical Processing for Semiconductor Devices, vol. 17, pp. 193-198, North-Holland, Publisher (1988)*.
W. D. Goodhue et al., "Planar Quantum Wells With Spatially Dependent Thicknesses and Al Content", Journal of Vacuum Science Technology, vol. B 6(3), pp. 846-849, May/Jun. 1988.
J. E. Epler et al., "AlGaAs Multiple Wavelength Light Emitting Bar Grown by Laser Assisted Metalorganic Chemical Vapor Deposition", Applied Physics Letters, vol. 52(18), May 2, 1988.
W. Roth et al., "GaAs Mesa Diodes made by Direct Writing Laser Stimulated MOCVD", Microelectronics Journal, vol. 15(1), pp. 26-29, 1984.
Pending patent application of William D. Goodhue entitled "Tapered Laser or Waveguide Optoelectronic Structures and Method", M.I.T. Case No. 4577.
Optics and Laser Technology, Part One: vol. 18(6), pp. 313-317, Dec., 1986.
Optics and Laser Technology, Part Two: vol. 19(1), pp. 19-25, Feb. 1987.
Optics and Laser Technology, Part Three: vol. 19(2), pp. 75-82, Apr., 1987.
W. Roth et al, Material Resource Society Symposium Proceedings, vol. 17, p. 793, 1983.
Aoyagi et al., "Laser Enhanced Matalorganic Chemical Vapor Deposition Crystal Growth in GaAs", Applied Physics Letters, vol. 47(2), pp. 95-96, Jul. 15, 1985.
S. M. Bedair et al., "Laser Selective Deposition of GaAs on Si", Applied Physics Letters, vol. 48(2), pp. 174-176, Jan. 13, 1986.
H. Kukimoto et al., "Selective Area Control of Material Properties in Laser-Assisted MOCPE of GaAs and AlGaAs" Journal of Crystal Growth, vol. 77(1-3), pp. 223-228, Sep., 1986.
T. Soga et al, "High Temperature Growth Rate in MOCVD Growth of AlGaAs" Journal of Crystal Growth, vol. 68(1), pp. 169-175, Sep., 1984.
Chung Harlan F.
Epler John E.
Paoli Thomas L.
Anthony Joseph D.
Carothers, Jr. W. Douglas
Small Jonathan A.
Stoll Robert L.
Xerox Corporation
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