Method of in-situ monitoring of crystallization state

Details Method of in-situ monitoring of crystallization state Method of in-situ monitoring of crystallization state

2006-09-05

2006-09-05

Pham, Hoa Q. (Department: 2877)

Optics: measuring and testing

For light transmission or absorption

C356S445000

Reexamination Certificate

active

07102750

ABSTRACT:
A method of in-situ monitoring of a crystallization state is used for laser anneal processing for applying an energy line irradiation for at least one of crystallization of a thin film and promotion of the crystallization. The method of in-situ monitoring of a crystallization state is characterized by irradiating simultaneously at least a plurality of monitoring places in a region having a predetermined area of at least one of the surface and the underside of the thin film by a monitor light for monitoring a crystallization state of the thin film at least during or after of before, during and after the energy line irradiation directly or through a substrate, and measuring a temporal change of the intensity of at least one of a reflected light and a transmitted light, from the surface or the underside of the thin film, of the monitor light as a light intensity distribution related to the positions of the monitoring places.

REFERENCES:
patent: 6633831 (2003-10-01), Nikoonahad et al.
patent: 09-314065 (1999-06-01), None
patent: 2000-396474 (2001-09-01), None
Article entitled, “Excimer Laser-Induced Temperature Field in Melting and Resolidification of Silicon Thin Films”, published inJournal of Applied Physics, vol. 87, No. 1, dated Jan. 1, 2000.

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