Method of improving yield of LED arrays

Fishing – trapping – and vermin destroying

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148DIG99, 156645, 357 17, 357 45, 437 8, 437 23, 437226, 437906, H01L 2120, H01L 2166, H01L 21302

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049277782

ABSTRACT:
A high yield method for the fabrication of multi-element, gallium-arsenide-phosphide light emitting diode arrays having square light emitting elements 7903 square microns on 88.9 micron center suitable for use in electronic/optical printers, is described. The resulting arrays at a current density of 200 A/cm.sup.2 have 0.6% power efficiency and a radiant exitance of 3.8 W cm -2 with less than 2% standard deviation in element to element radiant exitance. The integrated, relatively low cost LED arrays, are particularly suitable for use in electronic/optical printing applications.

REFERENCES:
patent: 3185927 (1961-01-01), L. G. Margulis et al.
patent: 3232799 (1966-02-01), W. C. Dash
patent: 3341937 (1967-09-01), F. H. Dill, Jr.
patent: 3618201 (1971-11-01), T. Makimoto et al.
patent: 3813761 (1974-06-01), Foster
patent: 3816906 (1974-06-01), Faldesnberg
patent: 4236296 (1980-12-01), Woolhouse et al.
patent: 4455562 (1984-06-01), Dolan et al.
patent: 4455741 (1984-06-01), Kolodner
patent: 4536778 (1885-08-01), De Schamphelaere et al.
patent: 4542397 (1985-09-01), Biegelsen et al.
patent: 4590667 (1986-05-01), Simon
patent: 4596995 (1986-06-01), Yamakawa et al.
patent: 4604161 (1986-08-01), Araghi
patent: 4637938 (1987-01-01), Lee et al.
patent: 4660275 (1987-04-01), Lo
"Characterization of Vapor Grown (001) GaAs.sub.1-x P.sub.x Layers by Selective Photo-Etching" by L. Blok--Journal of Crystal Growth, 31, (1975) pp. 250-255 by North-Holland Publishing Company.
"Enhanced Degradation and Deep-Level Formation at Dislocations in GaAs.sub.0.6 P.sub.0.4 LED's" by S. Metz-Applied Physics Letter, vol. 30, No. 6-15 Mar. 1977-p. 296.

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