Method of improving the wafer-to-wafer thickness uniformity...

Details Method of improving the wafer-to-wafer thickness uniformity... Method of improving the wafer-to-wafer thickness uniformity...

2004-06-30

2011-12-27

Cleveland, Michael (Department: 1712)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255280, C427S255230

Reexamination Certificate

active

08084088

ABSTRACT:
Wafer-to-wafer thickness uniformity may be improved significantly in a process for depositing a silicon nitride layer in that the flow rate of the reactant and the chamber pressure are varied during a deposition cycle. By correspondingly adapting the flow rate and/or the chamber pressure before and after the actual deposition step, the process conditions may be more effectively stabilized, thereby reducing process variations, even after non-deposition phases of the deposition tool, such as a preceding plasma clean process or an idle period of the tool.

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