Method of improving the spectral response and dark current chara

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437174, 148DIG93, 148DIG94, H01L 21265

Patent

active

058405925

ABSTRACT:
A method of simultaneously improving the spectral response and dark current characteristics of an image gathering detector is disclosed. The method uses an excimer laser to redistribute and activate ion implanted dopant species in the backside of an image gathering device such as a backside-illuminated CCD. Alternately, the excimer laser is used to incorporate dopants from a gaseous ambient into the backside of the image gathering device and simultaneously redistribute and activate the dopants. The redistribution of the dopant is controlled by the laser pulses and provides for a peak dopant concentration at the back surface of the image gathering device which provides for improved spectral response and simultaneously improves dark current characteristics.

REFERENCES:
patent: 3811182 (1974-05-01), Ryan, Sr. et al.
patent: 4422091 (1983-12-01), Liu
patent: 4436557 (1984-03-01), Wood et al.
patent: 4545823 (1985-10-01), Drowley
patent: 4641963 (1987-02-01), Levine
patent: 4656519 (1987-04-01), Savoye
patent: 4674176 (1987-06-01), Tuckerman
patent: 4716447 (1987-12-01), Savoye
patent: 4760031 (1988-07-01), Janesick
patent: 4774557 (1988-09-01), Kosonocky
patent: 4865923 (1989-09-01), Ralston et al.
patent: 4932747 (1990-06-01), Russell et al.
patent: 4961052 (1990-10-01), Tada et al.
patent: 4975638 (1990-12-01), Evans et al.
patent: 5027063 (1991-06-01), Letourneau
patent: 5061643 (1991-10-01), Yagi
patent: 5354420 (1994-10-01), Russell
patent: 5385633 (1995-01-01), Russrell et al.
P.G. Carey et al., "A Shallow Junction Submicrometer PMOS Process Without gh-Temperature Anneals," IEEE Electron Device Letters, vol. 9, No. 10, Oct. 1988, pp. 542-544.
V. Gutman, ed., Halogen Chemistry, vol. 2 New York: Academic Press, 1967, pp. 173-189.
H.F. Winters et al, "Surface Processes in Plasma-Assisted Etching Environments", J. Vac. Sci. Tech. B 1(2), Apr.-Jun. 1983.
B. A. Heath et al, "Plasma Processing for VLSI," Chapter 27, VLSI Handbook, (San Diego: Academic Press, 1985)pp. 487-502.
R. M. Osgood, Jr. et al, "Localized Laser Etching of Compound Semiconductors in Aqueous Solution", Appl. Phys. Lett., 40, 391, 1982.
R. J. von Gutfeld et al, "Laser-Enhanced Etching in KOH", Appl. Phys. Lett., 40 352 (1982).
F. V. Bunkin, "Laser Control over Electrochemical Processes", SPIE vol. 473 Symposium OPTIKA '84, pp. 31-37.
S. Braunauer et al, "Adsorption of Gases in Multimolecular Layers", J. Am Chem. Soc., 60, 309 (1938).
R. Gauthier et al, "Mechanism Investigations of a Pulsed Laser Light Induced Desorption", Phys. Stat. Sol. (A), 38, 447 (1976).
D. Ehrlich et al, "A Review of Laser-Microchemical Processing", J. Vac. Sci. Tech., B, 1, 969 (1983).
F. A. Houle, "Basic Mechanisms in Laser Etching and Deposition,", Appl. Phys. A, 41, 315 (1986).
D. Bauerle, "Chemical Processing with Lasers: Recent Developments", Appl. Phys. B, 46, 261 (1988).
T. J. Chuang, "Laser-Induced Chemical Etching of Solids: Promises and Challenges", Laser Controlled Chemical Processing of Surfaces, vol. 29, pp. 185-194.
R. Kullmer et al, Laser-Induced Chemical Etching of Silicon in Chlorine Atmosphere: I. Pulsed Irradiation, Appl. Phys. A, 43, 227 (1987).
P. Mogyorosi et al, "Laser-Induced Chemical Etching of Silicon in Chlorine Atmosphere: II. Continuous Irradiation", 45, 293.
R. Kullmer et al, "Laser-Induced Chemical Etching of silicon in Chlorine Atmosphere: III. Combined CW and Pulsed Irradiation", 47, 377 (1988).
Y. Horiike et al, "Excimer-Laser Etching on Silicon", Appl. Phys. A, 44, 313 (1987).
W. Sesselmann et al, "Chlorine Surface Interaction and Laser-Induced Surface Etching Reactions", J. Vac. Sci., Tech. B 3, 1507 (1985).
S. Palmer et al "Laser-Induced Etching of Silicon at 248 nm by F.sub.2 /Ne," Conference on Lasers and Electro-Optics Technical Digest Series 1988, vol. 7, 284 (Optical Society of America, Washington, D.C. 1988).
J. H. Brannon, "Chemical Etching of Silicon by CO.sub.2 -Laser Induced Dissociation of NF.sub.3 ", Appl. Phys. A, 46, 39 (1988).
T. J. Chuang, "Infrared Laser Radiation Effects On XeF.sub.2 Interaction with Silicon", J. Chem. Phys., 74, 1461 (1981).
F. A. Houle, "Photoeffects on the Fluorination of Silicon: I. Influence of Doping on Steady-State Phenomena", J. Chem. Phys., 79, 4237 (1983).
F. A. Houle, "Photoeffects on the Fluorination of Silicon: II. Kinetics of the Initial Response to Light", J. Chem. Phys., 80, 4851, (1984).
T. J. Chuang, "Multiple Photon Excited SF.sub.6 Interaction with Silicon Surfaces", J. Chem. Phys., 47, 1453 (1981).
M. D. Armacost et al, "193 nm Excimer Laser-Assisted Etching of Polysilicon", Mat. Res. Soc. Symp. Proc., vol. 76, (1987) pp. 147-156.
C. Tassin et al, "Thinned Backside Illuminated CCDs for Ultraviolet Imaging", SPIE vol. 932 Ultraviolet Tech. II(1988).
S. D. Russell et al, "Bipolar Transistors In Silicon-On-Sapphire (SOS): Effects of Nanosecond Thermal Processing", IEEE SOS/SOI Tech. Conf. Proc. (1990).
K. H. Weiner et al, "Thin-Base Bipolar Transistor Fabrication Using Gas Immersion Laser Doping", IEEE 1989.
Wolf & Tauber Silicon Processing for the VLSI ERD, vol. 1, Process Tech. Lattice Press, Sunset Beach, CA (1986) pp. 308-309.
S. D. Russell et al, "Excimer Laser-Assisted Etching of Silicon Using Chloropentafluoroethane", In-Situ Patterning: Selective Area Deposition and Etching, Mater. Res. Soc. Proc., 158, 325 (1990).
D. Lubben, "Laser Induced Plasmas for Primary Ion Deposition of Epitaxial Ge and Si Films", J. Vac. Sci. Tech., B, 3, 968 (1985).
John R. Abelson et al, "Epitaxial Ge.sub.x Si.sub.1-x /Si (100) Structures Produced by Pulsed Laser Mixing of Evaporated Ge on Si (100) Substrates", Appl. Phys. Lett. 52, 230(1988).
A.E. Bell, "Review and Analysis of Laser Annealing", RCA Review, 40, 295 (1979).
L. D. Hess et al, "Applications of Laser Annealing in IC Fabrication", in Laser-Solid Interactions and Transient Thermal Processing of Materials, Mat. Res. Soc. Symp. Proc., 13, 337 (1983).
R. J. Pressley, "Gas Immersion Laser Diffusion (Gilding)", Laser Processing of Semiconductor Devices, Proc. SPIE, 385, 30 (1983).
D. H. Lowndes et al, Pulsed Excimer Laser (308 nm) Annealing of Ion Implanted Silicon and Solar Cell Fabrication, Lase-Solid Interactions and Transient Thermal Processing of Materials, Mat. Res. Soc. Symp. Proc., 13, 407 (1983).
"Excimer Laser Planarization System", Solid State Technology 1989.
T.E. Deacon et al "Automation and Defect Control of Silicon Epitaxy for CCD Devices", Microelectronics Manufacturing Tech., May 1991.
D. J. Ehrlich et al, "Laser-induced microscopic etching of GaAs and InP", Appl. Phys. Lett., 36(8), 15 Apr. 1980.
Brewer, Peter, "Photon-assested dry etching of GaAs", Appl. Phys. Lett, 45(4), 15 Aug. 1984.
Y. Rytz-Froidevaux et al, "Laser Generated Microstructures", Appl. Physl. A.,37, 121-138, (1985).
G. Kaminsky, "Micromachining of Silicon Mechanical Structures", J. VacSci. Technol.B, vol. 3,No. 4 Jul./Aug. 1985.
Industry News, Semiconductor International May 1990.
S. D. Russell et al, "Excimer Laser Assisted Etching of Silicon Using Chloropentafluorethane", Mat.Res. Soc. Symp. Proc. vol. 158 1990.
Blouke, "800.times.800 Charged-Coupled Device Image Sensor", Optical Engineering, Sep./Oct. 1983/ vol. 22 No. 5.
R. A. Stern et al, "Ultraviolet Quantum Efficiency and Vacuum Stability of Ion-Implanted, Laser Annealed CCDs", SPIE vol. 1071 Optical Sensors and Electronic Photography 1989.
R. A. Stern, "Ultraviolet and Extreme Ultraviolet Response of Charge-Coupled Device Detectors", Optical Engineering, Sep. 1987/vol. 26, No. 9.
James R. Janesick et al, "Flash Technology for Charge-Coupled-Device Imaging", Optical Engineering, Sep. 1987/vol. 26 No. 9.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of improving the spectral response and dark current chara does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of improving the spectral response and dark current chara, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of improving the spectral response and dark current chara will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1701223

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.