Method of improving the radiation resistance of silicon transist

Details Method of improving the radiation resistance of silicon transist Method of improving the radiation resistance of silicon transist

1973-11-15

1976-01-27

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29585, 357 91, H01l 754

Patent

active

039350339

ABSTRACT:
The radiation resistance of silicon transistors with a silicon oxide coating is improved by irradiating the semiconductor device with electrons at an energy below 150 keV and a dose between 10.sup.9 and 10.sup.12 rad at the boundary layer between the silicon and silicon oxide coating. The temperature of the semiconductor device is maintained at a temperature of between 150.degree. and 450.degree.C during irradiation thereof.

REFERENCES:
patent: 3430043 (1969-02-01), Blumenfeld et al.
patent: 3570112 (1971-03-01), Barry et al.

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