Method of improving the flatness of wiring layer

Details Method of improving the flatness of wiring layer Method of improving the flatness of wiring layer

1992-05-08

1993-10-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 32, 437 33, 437 69, H01L 2170

Patent

active

052565890

ABSTRACT:
A semiconductor device fabricating method removes bird's head formed in the edges of a SiO.sub.2 film formed by a recessed LOCOS process in fabricating a semiconductor device. The semiconductor device fabricating method comprises steps of forming device isolating regions (6) on a silicon substrate (1) by a recessed LOCOS process, forming an insulating film (10) over the entire surface of the work, and simultaneously forming contacts of a polycrystalline silicon film (15) between the device isolating regions (6) and resistors of the polycrystalline silicon film (15) over the device isolating regions (6). Portions of the polycrystalline silicon film (15) corresponding to the bird's heads in the edges of the insulating film (10) are removed selectively, and exposed portions of the insulating film (10) and the bird's heads in the device isolating regions (6) are removed sequentially by etching to flatten the surface of the work.

REFERENCES:
patent: 4721687 (1988-01-01), Kakumu et al.
patent: 4879252 (1989-11-01), Komatsu

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