Method of improving surface planarity

Details Method of improving surface planarity Method of improving surface planarity

2005-12-27

2005-12-27

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C118S715000, C118S719000

Reexamination Certificate

active

06979367

ABSTRACT:
A method of improving surface planarity of a wafer. The method includes forming a first thin-film layer on the wafer using CVD in a first thin film deposition apparatus having at least one gas injector, relative to which the wafer has a first orientation, and forming a second thin-film layer on the wafer using CVD. The second deposition takes place in a second thin film deposition apparatus having at least one second gas injector arranged the same as that in the first thin film deposition apparatus, the wafer having a second orientation relative to the gas injector in the second thin film deposition apparatus. A first angle between the two orientations results in the second apparatus' injector distributing material in a different area from that of the first gas injector.

REFERENCES:
patent: 5976261 (1999-11-01), Moslehi et al.
patent: 6464790 (2002-10-01), Sherstinsky et al.
patent: 6557607 (2003-05-01), Yamada et al.

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