Method of improving silicon dioxide

Details Method of improving silicon dioxide Method of improving silicon dioxide

1986-06-17

1988-09-27

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG82, 437 24, 437247, H01L 21265, B44C 122

Patent

active

047741970

ABSTRACT:
A method of improving the integrity of silicon dioxide is disclosed. As applicable, for example, to the formation of oxide regions in an integrated circuit (such as thin, gate oxides) an implantation of nitrogen ions is performed prior to high temperature processing steps of the circuit fabrication. High temperature steps then result in silicon-nitrogen compounds being formed at the interfaces of the silicon dioxide regions with subjacent and superjacent regions of the integrated circuit structure. These compounds prevent the incursion of impurities into the silicon dioxide which would degrade its quality.

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