Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1997-12-08
1999-06-01
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 45, 438 46, 438 47, 438962, H01L 2102
Patent
active
059096144
ABSTRACT:
A modification process of formation of microscopic clusters (quantum dots) in a semiconductor material and changing refractive index in the near-surface region of the material is used for improving performance of different semiconductor light emitting devices. The clusters formation directly in an active region of a semiconductor laser diode results in increasing its power, slope efficiency and decreasing threshold current. Changing the refractive index distribution along active and passive regions of the semiconductor material enables fabrication of uniform or non-uniform waveguide structures along a laser diode cavity and optical isolation of individual emitters in a laser diode array. Modification of the refractive index in the vicinity of laser mirrors allows efficient control of reflection from laser mirrors. The modification can be used instead of mirror coating resulting in considerable increasing the laser diode power and decreasing threshold current. Enhancement of the third order nonlinearity in a semiconductor material after its modification is useful for performing different all-optical functions. The method can be applied to many semiconductor based active and passive integrated optical and photonic devices, including diode lasers, diode laser bars and arrays, vertical cavity surface emitting lasers (VCSELs), and light emitting diodes. It is useful in all applications where highly efficient diode lasers are required, including high-power laser diode systems for pumping solid state lasers, industrial cutting and welding and different medical procedures.
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Bowers Charles
Christianson Keith
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