Method of improving overlay performance in semiconductor...

Details Method of improving overlay performance in semiconductor... Method of improving overlay performance in semiconductor...

2011-04-19

2011-04-19

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S692000, C438S710000, C438S720000, C438S700000, C257S797000, C257SE23179

Reexamination Certificate

active

07927960

ABSTRACT:
A method for registering a pattern on a semiconductor wafer with an oxide surface includes etching into the surface four sets of two trenches each. Each trench in a set is parallel to the other. The trenches are configured such that each set forms one side of a box shape. The trenches are overfilled with a first metal layer, the excess of which is removed so that the height of the metal is level with the height of the oxide. An overlay setting is then obtained between a photoresist mask and the filled trenches before depositing a second metal layer over the oxide and trenches. The second metal layer is coated with the photoresist according to the overlay setting.

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