Method of improving ohmic contact through high-resistance oxide

Details Method of improving ohmic contact through high-resistance oxide Method of improving ohmic contact through high-resistance oxide

1976-06-29

1977-12-06

DiPalma, Victor A.

Metal working

Method of mechanical manufacture

Electrical device making

29 2535, 219 92, H01R 4300

Patent

active

040608883

ABSTRACT:
A novel method is described for improving the ohmic contact through a relatively high electrical-resistance oxide film formed on at least one of two materials joined together to provide a low-resistance electrical junction. A current pulse of sufficient magnitude and duration is directed through the junction so that the oxide film breaks down and so that normal operating currents can then pass through the junction between the two materials.

REFERENCES:
patent: 2392429 (1946-01-01), Sykes
patent: 3634929 (1972-01-01), Yoshida et al.
patent: 3666913 (1972-05-01), Haefling et al.
patent: 3787966 (1974-01-01), Klossika

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